应用遗传算法提取GaAs场效应管小信号模型参数  

GaAs FET Small-Signal Model Extraction Using Genetic Algorithm

作　　者：喻筱静[1] 王家礼[1] 

机构地区：[1]西安电子科技大学,西安710071

出　　处：《半导体技术》2004年第12期35-37,44,共4页Semiconductor Technology

摘　　要：利用阻抗矩阵法求出GaAs场效应管的小信号等效电路S参数,并提出应用遗传算法提取等效电路模型参数。该法具有收敛快速、精确度高的特点,使各个模型参数均能得到较为精确快速的提取。The impedance-matrix method is employed to calculate the scattering matrix ofmicrowave GaAs FET. And the GA(genetic algorithm) is used to optimize the small-signal equivalentcircuit parameters. This algorithm has the advantages of converging quickly and high accuracy,which can make every parameter in the model to be extracted accurately.

关 键 词：小信号等效电路模型 参数提取 遗传算法 

分 类 号：TN386[电子电信—物理电子学]