热壁化学气相沉积Si基GaN晶体膜的研究  

The Investigation of GaN Films Grown on Si Substrates by Hot-Wall Chemical Vapor Deposition

作　　者：曹文田[1] 孙振翠[1] 魏芹芹[1] 薛成山[1] 孙海波[1] 

机构地区：[1]山东师范大学,山东济南250014

出　　处：《稀有金属材料与工程》2004年第11期1226-1228,共3页Rare Metal Materials and Engineering

基　　金：国家自然科学基金重大研究计划(90201025);国家自然科学基金(60071006)资助项目

摘　　要：采用热壁化学气相沉积工艺在 Si(111)衬底上生长 GaN 晶体膜,并对其生长条件进行研究。用 X 射线衍射(XRD)、扫描电镜(SEM)、荧光光谱(PL)对样品进行结构、形貌和发光特性的分析。测试结果表明:用此方法得到了六方纤锌矿结构的 GaN 晶体膜。实验结果显示:采用该工艺制备 GaN 晶体膜时,选择 H2 作反应气体兼载体,对 GaN 膜的形成起着非常有利的作用。GaN films on Si substrates were obtained by hot-wall chemical vapor deposition and the growth condition during the process was investigated. The structure, surface morphology and the optical properties were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL). It indicated that hexagonal wurtzite GaN films were obtained on Si substrates. Preliminary results suggest that H-2 as carrier gas play an important role at the same temperature in the growth of GaN films.

关 键 词：热壁化学气相沉积 GaN晶体膜 载体H2 

分 类 号：TN304[电子电信—物理电子学]