等离子体化学气相沉积Ti-N-C膜的研究  

PLASMA CHEMICAL VAPOUR DEPOSITION OF Ti-N-C FILMS

作　　者：赵程[1] 彭红瑞[1] 李世直[1] 

机构地区：[1]青岛化工学院

出　　处：《金属学报》1993年第1期B039-B044,共6页Acta Metallurgica Sinica

基　　金：国家自然科学基金

摘　　要：用XPS,AES,XRD,SEM及显微硬度计分析和测试了不同成分的等离子体化学气相沉积(PCVD)Ti—N—C膜,并与PCVD一TiN膜比较。认为:Ti—N—C膜优异的耐磨性可归因于高显微硬度及致密的结构。AES及XPS分析结果表明,Ti—N—C与TiN膜表面吸附的氧原子价态不同,其决定因素是膜晶格中是否有足够的碳原子存在。氧吸附态的不同可能导致不同的磨损失效方式。Plasma chemical vapour deposited (PCVD) Ti-N-C films with different C and N contents were examined, in comparison with C-free ones, by XPS, AES, XRD, SEM and microhardness testing. The PCVD Ti-N-C film may attribute its superior wear resist- ance to its high microhardness and dense structure. The variety of valence state of oxygen atoms adsorbed on Ti-N-C or TiN film surface was detected by AES and XPS analyses. Whether or not sufficient C atoms, existing in the lattice of the films seems to be decisive. Dif- ferent states of oxygen adsorbed may cause different modes of abrasive damage of film.

关 键 词：Ti-N-C膜 TIN膜 PCVD 

分 类 号：TG174.442[金属学及工艺—金属表面处理]