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作 者:袁敏[1]
出 处:《红外技术》2004年第6期48-50,共3页Infrared Technology
基 金:涪陵师范学院重点学科建设基金资助项目(2003-148)
摘 要:采用离子束溅射技术制备了 Co20Cu80磁性颗粒膜样品,并对它的电阻进行了研究:在低磁场时,dV/dI 谱线变化缓慢;当 H>HS 时,在通过点接触注入高密度电流为 108A/cm2 时 dV/dI 谱线出现一个峰值。认为该电阻变化是由于在 Co20Cu80磁性颗粒膜中零波数自旋波的激发,并用试探性的理论给予了解释。同时还研究了 Co20Cu80磁性颗粒膜的巨磁电阻以及在高注入电流和强磁场下的静态电阻。Using ion-beam sputtering technique, a series of Co20Cu80 granular film samples have been fabricated. We have observed variations in the resistance of the samples: in the lower magnetic fields the variations of dV/dI curve is slow. When H>HS , a high current density (108A/cm2) is injected into the samples through a means of point contact, the dV/dI curve can appear a peak value . It’s proposed that the observed resistance changes are due to excitations of zero-wane-number spin wanes in the Co20Cu80 granular film. and it’s explained by a explorative theory . At the same time, the Giant Magnetoresistance (GRM) effect and static contact resistance (Rc) of the sample were investigated under the high inject current and the externally applied magnetic field
关 键 词:自旋波 注入电流 离子束溅射 强磁场 谱线 巨磁电阻 激发 磁性颗粒 驱动 峰值
分 类 号:TN312.8[电子电信—物理电子学] O484[理学—固体物理]
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