电子束蒸发a-Si_(1-x)Cr_x薄膜的ESR研究  

ESR Studies of Electron-Beam-Evaporated a-Si_(1-x)Cr_x Films

作　　者：甘润今[1] 陈光华[1] 张津燕 张仿清[1] 

机构地区：[1]兰州大学物理学系,兰州730000

出　　处：《兰州大学学报（自然科学版）》1993年第2期37-42,共6页Journal of Lanzhou University(Natural Sciences)

摘　　要：本文报导对电子束蒸发的 a-Si_(1-x)Cr_x 薄膜的 ESR 研完结果.实验结果表明,随掺 Cr 组分 X 的变化,薄膜的各个 ESR 特性参数都发生变化:(2.0034±0.0001)≤g≤(2.0052±0.0001).线型因子1为(2.14±0.01)≤1≤(3.57±0.01),峰峰宽△Bpp 为(6.20±0.05)G≤△Bpp≤(8.70±0.05)G.基于这些实验结果,我们采用 S.E.Barnes 的 ESR 动力理论对结果进行了分析讨论,揭示出 Cr 原子对 a-Si 薄膜悬挂键的补偿,Cr 原子的3d 局域自旋磁矩与传导电子的交换互作用是使 ESR 参数变化的原因.ESR studies have been undertaken of various chemical components ofelectron-beam-evaporated a-Si_(1_x)Cr_x films.Experiments reveal that theg value changes with(2.0034+0.0001)≤g≤(2.0052±0.0001),the line-shape factor 1 changes with(2.14±0.01)≤1≤(3.57±0.01)and the linewidthABpp changes with(6.20±0.05)G≤△Bpp≤(8.70±0.05)G in the compon-range of 0≤x≤10.00 at.%.The experimental results were analysedwith S.E.Barnes' dynamic theory of ESR spectrum based on the charac-tristics of ESR parameters.It was found that the changes of ESR para-meters depend on the compensation of Cr atoms for dangling bonds ina-Si films and the exchange interaction between conduction electrons andlocalized spins.

关 键 词：电子自旋共振 硅薄膜 电子束蒸发法 

分 类 号：TN304.12[电子电信—物理电子学]