半导体激光器温度控制研究  

Temperature Control of Semiconductor Laser for Interferometry

作　　者：曾华林[1] 江鹏飞[1] 谢福增[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《激光与红外》2004年第5期339-340,346,共3页Laser & Infrared

摘　　要：温度对半导体激光器的特性有很大的影响。为了使半导体激光器输出功率稳定,必须对其温度进行高精度的控制。利用PID控制网络设计了温控系统,控制精度达到±0.01℃,与无PID控制网络相比,极大的提高了系统的瞬态特性,并且试验发现采用带有温控系统的半导体激光器的输出功率稳定性比没有温控系统的输出功率得到显著改善。Semiconductor laser as the light source has many advantages such as smaller volume, but the temperature greatly influences the properties of the semiconductor laser. The temperature control must be very rigorous so that steady power of semiconductor laser is got. The temperature control system that designed according to PID control system is discussed in this paper. The precision of controlled temperature is ±0.01℃, the response characteristic of the system with PID control system is better than that of the system without PID control system,and the experiment shows that the stability of semiconductor laser power with temperature control system is better than that without temperature control system.

关 键 词：半导体激光器 输出功率 瞬态特性 网络设计 高精度 控制精度 温控系统 PID控制 温度控制 稳定性 

分 类 号：TN248.4[电子电信—物理电子学] TP273[自动化与计算机技术—检测技术与自动化装置]