用于注入层用途的湿法显影有机抗反射涂层(英文)  

Wet-Developable Organic Anti-Reflective Coatings For Implant Layer Applications

作　　者：XieShao AliceGuerrero YimingGu 

机构地区：[1]BrewerScience,Inc.,2401BrewerDrive,Rolla,MO65401USA [2]IntegratedDeviceTechnologyInc.,Hillsboro,OR97124USA

出　　处：《电子工业专用设备》2004年第11期29-36,共8页Equipment for Electronic Products Manufacturing

摘　　要：底部抗反射涂层(BARCs)和光刻胶已被广泛地用于半导体制造中的光刻加工工艺中。BARCs在光刻中的主要好处就是聚焦?曝光宽容度的改善,提高了关键尺寸的控制,消除了反射凹口,防止远紫外抗蚀剂由基底毒化。过去,BARCs主要被用于关键图层,例如栅和接触孔图层。但是随着集成电路特征尺寸的不断缩小,BARCs在注入层中的应用中由于基片表面形态引起的反射缺口和关键尺寸变化容差也变得更小,从而使BARCs的使用变得更为迫切。我们已成功开发了专门为注入层用途的湿法显影抗反射涂层。传统的干法刻蚀不适合用于注入层,因为它的工艺复杂而且在刻蚀过程中可能导致基片损坏。评述了产生注入光刻图层的工艺并讨论了湿法显影式抗反射涂层的设计标准和要求,同时还将讨论用于注入层光刻的湿法显影抗反射图层及其工艺的挑战。Bottom anti-reflective coatings(BARCs)have been widely used in conjunction with photore-sists in the manufacture of semiconductors during the photolithography step of the process.The primary benefits of BARCs in photolithography are focus?exposure latitude improvement,enhanced critical dimen-sion(CD)control,elimination of reflective notching,and protection of DUV resist from substrate poison-ing.In the past,BARCs have mainly been used in critical layers such as gate and contact layers.As inte-grated circuit feature sizes continue to shrink,the application of a BARC in implant layers becomes more desirable because the tolerances of reflective notching and CD variations caused by wafer topography are getting smaller.Wet-developable BARCs have been developed specifically for implant layer applications.The feasi-bility of using traditional dry-etch BARCs is very questionable because they introduce more process com-plexity and more defectivity and potentially cause unnecessary substrate damage.This paper will review the difficult challenges of producing implant lithography layers and discuss wet-developable BARC de-sign criteria and requirements.This paper will also discuss the performance of wet-developable BARCs used in implant layer lithography and the technical challenges of the process.

关 键 词：光学光刻 抗反射涂层 关键尺寸控制 衬底反射 注入 底部抗反射涂层 湿法显影 

分 类 号：TN305.7[电子电信—物理电子学]