CIGS薄膜太阳电池异质结的结构初析  

Research on the Structure of the Heterojunction of the CIGS Thin Film Solar Cells

作　　者：薛玉明[1] 孙云[1] 李凤岩[1] 朴英美[1] 刘维一 周志强[1] 李长健[1] 

机构地区：[1]南开大学光电子所,天津300071

出　　处：《人工晶体学报》2004年第5期841-844,共4页Journal of Synthetic Crystals

摘　　要：本论文通过实验制备得到CuIn0.7Ga0.3Se2(CIGs)、CdS、ZnO三种半导体材料,然后根据这三种半导体的相关材料参数和实验数据,得出了它们形成异质结前后的能带图,并计算它们的能带边失调值△EC、△EV。其中,CdS／CIGS的导带边失调值ΔEc对高效率CIGS薄膜太阳电池的影响作用最大,为-0.298eV(高效电池的理想值范围为0-0.4eV),说明这对电池整体性能不是很好。The junction characteristic of the heterojunction of the CuIn0.7Ga0.3Se2 (CIGS) thin film solar cells directly influences the properties of the solar cells. Therefore, it is necessary to research it systematically. In the experiments, we firstly fabricated the CuIn0.7Ga0.3Se2, CdS and ZnO thin films. According to the materials' parameters and experimental data, we attained the energy band figures before and after forming the heterojunction, and calculated their energy band offset ΔEC, ΔEV The conduction band offset ΔEC of the CdS/CIGS, which is the key factor to influence the properties of the solar cells, is -0.298 eV (the ideal data of the high efficiency solar cells are 0-0.4 eV.). That does harm to the properties of the solar cells.

关 键 词：铜铟硒薄膜太阳电池 异质结 结构 制备 半导体材料 能带边失调值 

分 类 号：TM914.42[电气工程—电力电子与电力传动]