HFPECVD法沉积BN薄膜及其生长机理的研究  

BN Films Deposited by HFPECVD and the Mechanism of the Process

作　　者：董博[1] 张溪文[1] 韩高荣[1] 

机构地区：[1]硅材料国家重点实验室,浙江大学材料系,浙江杭州310027

出　　处：《材料科学与工程学报》2004年第6期847-850,共4页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目 (60 0 0 60 0 3)

摘　　要：本文介绍了用HFPECVD(hotfilamentplasmaenhancedchemicalvapordeposition)法制备BN薄膜。通过红外吸收谱和x射线衍射图谱分析确定 ,射频功率和反应气体 (N2 )气流量显著影响薄膜中立方相BN(c BN)的相对含量。当射频功率小于 2 0 0W时 ,薄膜中立方相的相对含量随它的增加而增大 ;而当射频功率大于 2 0 0W时 ,则随它增加而减小。当N2 气流量增加时 ,薄膜生长速率增加 ,但立方相的相对含量却减少。最后通过对不同沉积时间样品的红外吸收谱的分析对BN薄膜的生长机理进行了探讨。BN films were deposited by HFPECVD (hot filament plasma enhanced chemical vapor deposition).The sutdy of infrared absorption patterns (IR) and X-ray diffraction diagrams (XRD) of the films reveals that the fraction of cubic boron nitride(C-BN) iS Strongly depended on the effect of r.f. power and the flow ratio of N 2.When r.f. power lower than 200W,the fraction of cubic boron nitride increases with the power increasing; while when r.f. power higher than 200W,it decreases with the power increasing.With the increasing of the flow ratio of N 2 the rate of growth of the films increases,however the fraction of cubic boron nitride (c-BN) decreases.At last we infered the mechanism of c-BN formation by the study of IR of the films deposited by different time.

关 键 词：薄膜 BN 反应气体 立方相 相对含量 气流量 制备 射频功率 红外吸收谱 速率 

分 类 号：TN304[电子电信—物理电子学] TN305