Bi_2O_3-Y_2O_3体系中纳米δ-Bi_2O_3相的生成规律研究  被引量:2

Study on preparating process of nanometer Bi_2O_3-Y_2O_3 fast ionic conductor

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作  者:何伟明[1] 甄强[2] 潘庆谊[3] 刘建强[1] 

机构地区:[1]上海大学材料学院,上海200072 [2]上海大学纳米科学与技术中心,上海200436 [3]上海大学理学院,上海200436

出  处:《功能材料》2004年第6期727-729,共3页Journal of Functional Materials

基  金:国家自然科学基金资助项目(20101006)

摘  要: 以分析纯的Bi(NO3)3·5H2O和Y(NO3)3·6H2O作为原料,经反向滴定法化学共沉淀、干燥和430℃焙烧后获得(75mol%Bi2O3+25mol%Y2O3)纳米复合粉体,粉体平均粒度30nm以下;通过常压反应烧结工艺制备了纳米Bi2O3 Y2O3快离子导体,对烧结过程中高导电相(纳米δ Bi2O3)的形成规律研究结果表明:烧结初期以固溶反应为主,后期以晶粒长大为主,晶粒生长规律符合(D-D0)2=K·t抛物线方程;用模式识别技术对δ Bi2O3相生成的工艺条件进行了优化。With A.R.Bi(NO3)3&middot5H2O and Y(NO3)3&middot6H2O being raw material, nanometer (75 mol% Bi2O3 + 25 mol% Y2O3) powder was prepared by reversing titration with chemical coprecipitation; its average grain size was below 30 nm. The above powder was pressed to billets, and then sintered at different temperatures by pressureless sintering; By XRD technique, the law of grain grow-up and that of δ-Bi2O3 formation were studied, and the results showed that the initial stage of sintering was primarily solution reaction, and the anaphase was mostly crystal grain growth which followed the rule of paracurve: (D-D0)2 = K&middott. In the end, the above sintering condition was optimized by pattern recognition technique.

关 键 词:纳米氧化铋 共沉淀法 δ-Bi2O3 工艺优化 

分 类 号:O646.1[理学—物理化学]

 

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