Nb掺杂对ZnO压敏陶瓷电学性能的影响  

Effect of Nb on the Electrical Properties of ZnO Based Varistors

作　　者：臧国忠[1] 王矜奉[1] 陈洪存[1] 苏文斌[1] 王文新[1] 王春明[1] 亓鹏[1] 

机构地区：[1]山东大学物理与微电子学院,济南250100

出　　处：《压电与声光》2004年第6期457-459,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(50072013)

摘　　要：研究了Nb2O5对ZnO压敏材料电学性能的影响。当x(Nb2O5)从0增加到1%时,ZnO压敏电阻的击穿电压从209V/mm降至0.70V/mm,40Hz时,样品电阻从0.21MΩ降至48.3Ω,1kHz时的相对介电常数从831增大到42200。晶界势垒高度测量表明:在实验范围内,Nb对势垒高度的影响较小。ZnO晶粒的变大是压敏电压急剧降低和介电常数增大的主要原因。对Nb掺杂量的增加引起样品阻抗减小的根源进行了解释。The effect of Nb_2O_5 on the electrical properties of ZnO based varistors was investigated. The breakdown voltage of the ZnO based varistors decreased from 209 V/mm to 0.7 V/mm and the impedance of the samples decreased from 0.21 MΩ to 48.3 Ω at 40 Hz with increasing Nb_2O_5 concentration from 0 to 1.0 % and the relative dielectric constants increased from 831 to 42 200 at 1 kHz at the same time. Measurement of barrier height at grain boundaries revealed that the Nb_2O_5 concentration has less influence on barrier hight in this experimental range. The increase of ZnO grain size with increasing Nb_2O_5 concentration from 0 to 1.0 % is the substantial reason for raising of breakdown voltage and relative dielectric constants. The origin for the decrease of impedance of the samples caused by increasing Nb_2O_5 concentration was explained.

关 键 词：ZNO 压敏材料 势垒 晶界 

分 类 号：TN379[电子电信—物理电子学]