MOCVD生长GaAs/AlGaAs掺杂量子异质结构工艺评价  

Assessment on MOCVD Growth Techniques of GaAs/AlGaAs Quantum Heterostructures

作　　者：任红文[1] 刘士文[1] 徐现刚[1] 黄柏标[1] 蒋民华[1] 

机构地区：[1]山东大学晶体材料研究所,济南250100

出　　处：《人工晶体学报》1993年第2期132-135,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金

摘　　要：对常压 MOCVD 生长 GaAs/AIGaAs 掺杂多量子阱、超晶格及双极异质晶体管(HBT)和双势垒量子共振隧穿二极管(DBRTD)的生长工艺与结构性能的关系进行了研究。连续生长的量子阱材料载流子低温光荧光(PL)发光波长较间断生长结果蓝移,但强度为后者的10倍,且谱线也较窄。透射电镜(TEM)观察发现,间断生长界面间断处有一因组分波动和杂质吸附产生的亮条纹,且 AlGaAs/GaAs 和 GaAs/AlGaAs 两种异质界面不等同。利用连续生长工艺得到了间断生长未能实现的较高性能的 HBT、DBRTD 器件。GaAs/AlGaAs multi-quantum wells(MQWs),superlattices and he-terostructure bipolar transistors (HBTs) as well as double barrier resonant tu-nneling diodes (DBRTDs) have been grown by AP-MOCVD.The relations be-tween the structures and performances were studied.Low temperature photolu-minescence (PL) of continuously grown Si-doped MQWs resulted in a blueshifted,ten times stronger and narrower profile of carrier recombination lu-minescence compared with that of interruptedly grown ones.TEM study ofthe interrupted interface showed a bright line corresponding to the compositio-nal variation and impurity incorporation,and AlGaAs/GaAs,GaAs/AlGaAsinterfaces are not equivalent.High performance HBTs and DBRTDs have beenobtained by continuous growth method,and interruptions at the heterointerfa-ces resulted in poor results.It is concluded that growth interruptions duringMOCVD process cause impurity incorporation,which may become carrier traps and non-radiative recombination centers,and AlGaAs surfaces are more reactiveand rougher than GaAs ones.

关 键 词：化学汽相沉积 晶体 砷化镓 ALGAAS 

分 类 号：O614.371[理学—无机化学]