InAs量子点光致发光效率的研究  

Photoluminescence Efficiency from InAs Quantum Dots

作　　者：杨景海[1] 宫杰[2] 刘伟[1] 范厚刚[3] 杨丽丽[3] 赵庆祥 

机构地区：[1]吉林大学材料科学与工程学院,长春130023 [2]长春大学应用理学院,长春130022 [3]吉林师范大学凝聚态物理研究所,四平136000 [4]查尔摩斯技术大学光电物理所,瑞典哥德堡s41296

出　　处：《高等学校化学学报》2004年第12期2349-2352,共4页Chemical Journal of Chinese Universities

基　　金：吉林省科技发展计划项目 (批准号 :2 0 0 2 0 615 )资助

摘　　要：利用分子束外延技术制得 In As量子点样品 ,采用分光光度法对样品的光致发光效率进行研究 .发现在 In As层和 Ga As覆盖层之间插入隧道阻挡层 ,当激发功率密度为 60 W/ cm2 时 ,In As量子点发射强度的增加量超过一个数量级 .InAs quantum dots(QDs) were investigated by using optical spectroscopy, in order to understand the experimental observation of strong enhancement of their photoluminescence efficiency. When a tunneling barrier is introduced between the InAs layer and the GaAs cap layer, the intensity of the InAs QD emission increases by more than an order of magnitude at the excitation density of 60 W/cm 2. The enhancement of the optical recombination efficiency is due to the suppression of the nonradiative transitions in the wetting layer. The strong enhancement of the InAs emission can lead to an increase in the optical gain of the InAs laser structure.

关 键 词：INAS 量子点 光致发光效率 

分 类 号：O324[理学—一般力学与力学基础]