p型导电掺In的SnO_2薄膜的制备及表征  

Preparation and characterization of In-doped p-type SnO_2 thin films by sol-gel dip-coating

作　　者：季振国[1] 何振杰[1] 宋永梁[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《物理学报》2004年第12期4330-4333,共4页Acta Physica Sinica

基　　金：国家重点基础研究专项基金 (批准号 :G2 0 0 0 0 683 0 6);国家高技术研究发展计划 (批准号:2 0 0 3AA 3 A19 1)资助的课题~~

摘　　要：采用溶胶 凝胶提拉法成功地制备了p型导电掺In的SnO2 薄膜 .x射线衍射测试结果表明 ,掺In的SnO2 薄膜保持SnO2 的金红石结构 .吸收谱测试结果表明 ,掺In的SnO2 禁带宽度为 3 8eV .霍尔测量结果表明 ,空穴浓度与热处理温度有很大的关系 ,5 2 5℃为最佳热处理的温度 .铟锡原子比在 0 0 5— 0 2 0范围内 ,空穴的浓度与In的含量有直接的关系 。In doped SnO 2 thin films were prepared on quartz substrates by sol-gel dip-coating technique. X-ray diffraction results show that In-doped SnO 2 films are of rutile structure. Ultraviolet-visible absorption results show that In-doped SnO 2 films have an optical band gap of about 3 8?eV. Hall effect measurement results show that the hole concentration and the mobility are dependent on both the processing temperature and the In/Sn atomic ratio. It is found that 525℃ is the optimum processing temperature to get the highest hole concentration. For an In/Sn atomic ratio between 0 05 and 0 20,hole concentration is almost proportional to the In/Sn ratio.

关 键 词：SNO2薄膜 吸收谱 提拉法 空穴 原子 禁带宽度 表征 导电 制备 热处理温度 

分 类 号：O484[理学—固体物理]