GaAs/Ge太阳能电池电极银镀层结合力的研究  

The Study of Adhesion of Silver Electroplating Layer in Making Electrodeof GaAs/Ge Solar Cell

作　　者：李晓婷[1] 汪韬[2] 赛小锋[2] 王警卫[2] 

机构地区：[1]长安大学理学院,西安710061 [2]中国科学院西安光学精密机械研究所光电子学室,西安710068

出　　处：《激光与光电子学进展》2004年第12期31-33,共3页Laser & Optoelectronics Progress

摘　　要：采用自制的LP-MOCVD设备,在Ge衬底外延生长出GaAs电池结构,并对电池结构片进行了后工艺制作,同时对电极制作中银镀层结合力的影响因素进行了研究。研究结果表明选择带电入池,无冲击电流方式时,可增强银镀层的结合力。同时采用扫描电子显微镜(SEM)和电子微探针对n型Ge衬底上AuGeNi背电极不同层面的成分进行了分析测试.测试数据表明钨污染将会使银镀层结合力变差。GaAs/Ge heterostructure has been grown by home-made low pressure MOCVD system, and influencing factor of adhesion of silver electroplating layer in making electrode has been studied. The result showed that the mode of sample entering electroplating bath with electrification and without impact current could made the adhesion harder. The different layer element of AuGeNi back electrode on Ge substrate was analysed by means of scanning electron microscopy(SEM) and electron microprobe analysis, and the datum indicated wolfram pollution affected the adhesion of silver electroplating layer.

关 键 词：镀层 结合力 增强 电极 研究 成分 SEM 电池结构 太阳能电池 带电 

分 类 号：TN304[电子电信—物理电子学] TQ153[化学工程—电化学工业]