效率为12.1%的Cu(In,Ga)Se_2薄膜太阳电池  

A 12. 1% EFFICIENT Cu(In,Ga)Se_2 THIN-FILM SOLAR CELL

作　　者：何青[1] 孙云[1] 李凤岩[1] 敖建平[1] 刘芳芳[1] 李伟[1] 刘维一 孙国忠[1] 周志强[1] 薛玉明[1] 朴英美[1] 汲明亮[1] 郑贵波[1] 李长健[1] 

机构地区：[1]南开大学光电子研究所,天津300071

出　　处：《太阳能学报》2004年第6期782-784,共3页Acta Energiae Solaris Sinica

基　　金：国家863计划资助项目(2001AA513020)

摘　　要：利用共蒸发的三步法制备了较高质量的四元化合物Cu(In,Ga)Se2(CIGS)薄膜,并采用Mo/CIGS/CdS/ZnO 结构为基础做出转换效率超过10%的薄膜太阳电池,其最高转换效率达到12.1%(测试条件为:AM1.5,Global 1000W/m2)。通过与国际最高水平的CIGS太阳电池各参数的比较,分析了我们所制备的CIGS太阳电池在工艺和物理方面存在的问题。High efficiency four-compound Cu(In,Ga)Se2( CIGS) thin films were prepared using a three-step co -evaporation process. Furthermore, the conversion efficiency in excess of 10% has been achieved by thin film solar cell with a structure of Mo/CIGS/CdS/ZnO, and the maximum reached a 12. 1% efficiency level (test condition: AM1. 5, Global irradiance 1000W/m2) . The problems of fabricating technology and of physics were discussed comparing with the international highest level of CIGS thin film solar cell.

关 键 词：CIGS薄膜 太阳电池 转换效率 

分 类 号：TM615[电气工程—电力系统及自动化]