新结构微波功率SiGe HBT的数值分析  

Numerical Analysis of A Novel Microwave Power SiGe HBT

作　　者：刘亮[1] 王玉琦[2] 肖波[1] 亢宝位[1] 吴郁[1] 王哲[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022 [2]香港科技大学物理系

出　　处：《Journal of Semiconductors》2005年第1期96-101,共6页半导体学报（英文版）

摘　　要：提出一种新结构的微波功率SiGe异质结双极晶体管 (SiGeHBT) ,该结构通过在传统SiGeHBT的外基区下的集电区中挖槽并填充SiO2 的方法来改善器件的高频性能 .将相同尺寸的新结构和传统结构的器件仿真结果进行比较 ,发现新结构器件的基区 集电区电容减少了 5 5 % ,因而使器件的最大有效增益提高了大约 2dB ,其工作在低压(Vce=4 5V)和高压 (Vce=2 8V)情况下的最高振荡频率分别提高了 2 4 %和 10 % .A novel structure for microwave power SiGe HBTs is presented, which can improve the high frequency characteristics of devices by etching away the collector layers underneath the extrinsic base region and filling the resultant trenches with SiO 2.The simulation results of the novel and similar conventional structures are studied and compared.It is observed that the novel structure HBTs have a 55% reduction of the total base-collector capacitance.Due to this reduction,the novel structure device gives rise to a 2dB higher maximum available gain and higher maximum oscillation frequency (increases of 24% for low voltage SiGe HBT and 10% for high voltage SiGe HBT) than the conventional one does.

关 键 词：微波功率SiGe HBT MSG/MAG 最高振荡频率 

分 类 号：TN62[电子电信—电路与系统]