预先老化对注FnMOS器件辐射可靠性的影响  

Effect of Burn-in on Irradiation Reliablity of Fluorinated nMOSFET

作　　者：崔帅[1] 余学峰[1] 任迪远[1] 张华林[1] 艾尔肯[1] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011

出　　处：《Journal of Semiconductors》2005年第1期111-114,共4页半导体学报（英文版）

摘　　要：对注F和未注FCC4 0 0 7器件在 10 0℃高温老化后的Co60 辐照特性进行了研究 .研究发现辐照前的高温老化减少了注F器件在辐照中的界面态陷阱电荷的积累 ,但是普通器件辐照前的高温老化在减少辐照中界面态积累的同时却增加了氧化物电荷的积累 ,损害了器件的可靠性 .可见 。The influence of 100℃ burn-in before radiation on fluorinated CC4007 nMOS and those no fluorinated is reported.It is found that the burn-in before radiation can reduce the interface-trap in irradiation;but for no fluorinated in irradiation the interface-trap is reduced and oxide-trap is increased.The burn-in in 100℃ before radiation can reduce the reliability for device no fluorinated.But introducing minute amounts of fluorinate ions can improve the reliability in irradiation.

关 键 词：预先老化 辐照 注F 可靠性 

分 类 号：TN304[电子电信—物理电子学]