COF结构中键合力损伤芯片Al层的研究  

Damage of Bonding Force on IC Aluminum Pad in COF Structure

作　　者：彭瑶玮[1] 陈文庆 王志平 肖斐[1] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]飞利浦移动显示系统中国科技中心,上海200131

出　　处：《Journal of Semiconductors》2005年第1期209-214,共6页半导体学报（英文版）

摘　　要：运用实验和有限元模拟相结合的方法 ,研究了非导电膜和金 金共金工艺中键合力对芯片Al压焊块内应力分布的影响 ,并分析了样品的失效部位和失效原因 .挠性基板上印制线宽度不同时键合力对芯片损伤情况的研究表明 ,小印制线宽度在相同单位面积键合力情况下对Al压焊块损伤较轻 .The impact of bonding force on Al pad in IC chip,and the maximum bonding force are achieved by both experimental and simulative methods.Track width and misalignment are two main factors studied.The former affects the foil and interconnect design;while the later is related to manufacturing tolarence and bonding machine accuracy.It is shown that the bonding force,track width and misalignment have great influence on the maximum stress in the aluminum pad of the IC.

关 键 词：挠性板上芯片 非导电膜 金-金共金 有限元模拟 

分 类 号：TN105[电子电信—物理电子学]