锗硅低噪声放大器的研究进展  

Study of Low-noise Amplifiers Using SiGe Bipolar Technology

作　　者：李振国[1] 陈建新[1] 高铭洁[1] 

机构地区：[1]北京工业大学光电子实验室,北京100022

出　　处：《半导体技术》2005年第2期47-50,43,共5页Semiconductor Technology

基　　金：北京市自然科学基金资助(4032005)

摘　　要：介绍了采用锗硅技术的低噪声放大器的基本理论,给出了一个2GHz低噪声放大器的例子,并总结了近来采用锗硅技术的各种频段的低噪声放大器研究情况。最后,介绍了锗硅技术的广阔应用前景。<正>The theory of LNAs using SiGe bipolar technology is presented. And a 2GHz LNA based SiGe technology is presented in this article and state-of-the-art in SiGe based devices in different areas are described. Finally, the application of SiGe-based device was summarized.The theory of LNAs using SiGe bipolar technology is presented. And a 2GHz LNA based SiGe technology is presented in this article and state-of-the-art in SiGe based devices in different areas are described. Finally, the application of SiGe-based device was summarized.

关 键 词：锗硅双极性异质结晶体管 低噪声放大器:射频集成电路 

分 类 号：TN722.3[电子电信—电路与系统]