超突变结变容二极管C-V特性研究  

Research on Capacitance-Voltage Characteristics ofthe Hyper-abrupt Junction Diode

作　　者：吴春瑜[1] 尹飞飞[1] 

机构地区：[1]辽宁大学物理系,辽宁沈阳110036

出　　处：《辽宁大学学报(自然科学版)》2005年第1期1-3,共3页Journal of Liaoning University:Natural Sciences Edition

基　　金：辽宁省自然科学基金(002021);辽宁省教育厅科研基金(20021076)

摘　　要：对超突变结器件的杂质分布模型进行了研究并加以改进,导出不同杂质分布的新的电容电压方程,方程中的主要参数与实际工艺参数一致.理论结果与实验曲线符合得很好,证明假设的杂质分布模型是合理的,由此导出的电容电压方程是正确的和实用的.This essay is about the research and improvement of the model of impurity distribution of hyper-abrupt junction. As the result, several more suitable C-V equation was established. The main parameters are complied with the real parameters used in the technical line, and this is where the advantage of this equation lies. Theoretical results stand on line with the experimental figures, so this reflects that the impurity distribution model mentioned in this essay is reliable, so that the final equation is correct and applicable.

关 键 词：变容二极管 杂质 超突变结 

分 类 号：TN312[电子电信—物理电子学]