硅基光电集成器件研究进展  

Progress of silicon based optoelectronic integrated devices

作　　者：孙飞[1] 余金中[1] 

机构地区：[1]中国科学院半导体研究所集成光电子国家重点实验室,北京100083

出　　处：《物理》2005年第1期50-54,共5页Physics

基　　金：国家重点基础研究发展计划 (批准号 :G2 0 0 0 -0 3 -66) ;中国高技术研究发展计划 (批准号 :2 0 0 2AA3 12 0 60 );国家自然科学基金 (批准号 :60 3 3 60 10 )资助项目

摘　　要：随着器件结构与制作工艺的不断创新与完善 ,硅基发光器件已经可以实现室温下的有效工作 ,外量子效率可达到 0 .1% ;低功耗的硅基高速调制器件的调制速率达到 1GHz以上 ;而硅基光探测器对 130 0nm与 15 5 0nm波长的探测响应度也已分别达到了 0 .16mA/W和 0 .0 8mA/W .文章对硅基光电器件的研究进展情况进行了概述 。With the successive progress and improvements in device design and fabrication, silicon based light-emitting devices can now work efficiently at room temperature, with an external quantum efficiency of 0 1%. Silicon based modulators with low power consumption can attain a modulation speed as high as 1GHz, and newly reported silicon based optical detectors can detect wavelengths of 1300nm and 1550nm with a responsivity of 0.16mA/W and 0.08mA/W, respectively. The latest achievements in silicon based optoelectronic integrated devices are reviewed, and their structures and principle of operation are explained and analyzed.

关 键 词：硅基 响应度 调制器 外量子效率 器件结构 发光器件 光电集成器件 研究进展 GH 分析 

分 类 号：TN365[电子电信—物理电子学]