微电子材料CMP加工中去除率与速度的关系  

Dependency of Material Removal Rate on Velocity in CMP of Microelectronic Materials

作　　者：严波[1] 吕欣[2] 张晓敏[1] 

机构地区：[1]重庆大学资源及环境科学学院,重庆400030 [2]重庆大学土木工程学院,重庆400030

出　　处：《重庆大学学报（自然科学版）》2005年第2期104-106,共3页Journal of Chongqing University

基　　金：重庆大学青年骨干教师资助项目

摘　　要：通过研究微电子材料化学机械平坦化(CMP)加工过程中磨料颗粒在晶片加工表面的运动规律,得到磨料颗粒在晶片表面的运动轨迹方程。当晶片和垫板的转动角速度相同时,得出材料去除率(MMR)与垫板和晶片相对速度成正比的结论。给出了磨料颗粒在晶片加工表面形成的刮痕迹线实例。其结果对于正确理解微电子材料CMP加工中的材料去除机理具有实际意义。The relative motion law of the particles in slurry, with respect to the processed surface of the silicon, during the chemical mechanical planarization (CMP) of microelectronic materials is firstly discussed. The equations depicting the scratching traces of the particles in slurry on the surface of the silicon, which depend on the rotational velocities of the silicon and the pad, are obtained. It is concluded that when the silicon and pad rotate with the same rotational velocity, the material removal rate (MMR) is proportional to the rotational velocity. As an example, the scratching traces of the particles on the processed surface of the silicon are given out in the case that the rotational velocities of the silicon and pad are the same. The results are important for the understanding of the mechanism of material removal in the CMP of microelectronic materials.

关 键 词：微电子材料 化学机械平坦化 材料去除率 刮痕 

分 类 号：O33[理学—一般力学与力学基础]