间质内热疗后脑水肿与半导体激光剂量参数的关系  

Studies on Relation Between Cerebral Edema and Semiconductor Laser Dosage Affer Interstitial Heat Therapy

作　　者：张丙杰[1] 张健[2] 焦力群[2] 滕良珠[1] 王丽梅[3] 王吉华[3] 

机构地区：[1]山东大学医学院山东省立医院,济南市250101 [2]山东大学齐鲁医院 [3]济南市第三人民医院神经外科

出　　处：《中国激光医学杂志》2005年第1期6-8,共3页Chinese Journal of Laser Medicine & Surgery

摘　　要：目的　研究脑肿瘤热疗中脑水肿与半导体激光输出功率和作用时间的关系。方法　 35只成年新西兰白兔麻醉下暴露颅骨 ,将激光光纤未端插入大脑皮层下 2mm ,以不同功率和作用时间组合的 8 0 5mm半导体激光分别进行加热。术后第 3天常规气体栓塞处死动物 ,取脑组织脑水肿和脑损害的范围 ,应用计算机统计软件SPSS1 0 0进行数据分析。结果　脑水肿的程度与激光功率和作用时间相关 ,脑水肿和热疗剂量之间的回归方程呈线性。结论　按照激光热疗剂量和脑水肿带之间的回归方程 ,可以在临床脑肿瘤间质内热疗工作中预测脑水肿的范围 ,选择最合适的激光功率和作用时间 ,减少半导体激光间质内热疗的并发症。Objective To investigate the relation between the degree of brain edema and semiconductor laser output power and acting time during heat therapy of brain malignant tumor. Methods Thirty-five rabbits were treated with semiconductor laser respectively, and then the range of brain edema and lesion was measured. The pathology changes of cerebral hemisphere in rabbits were observed. All data were analyzed by computer software SPSS 10.0. Results The degree of brain edema is related to laser output power and acting time and the regressive equation between brain edema and heat-therapy doses presented in linearity. Conclusions According to the regressive equation between heat-therapy doses and brain edema zone.The degree of edema in clinical heat-therapy can be predicted, and the most suitable laser output power and acting time in reducing its complication is selected.

关 键 词：脑水肿 热疗 半导体激光 间质 内热 脑肿瘤 并发症 激光功率 光纤 光输出 

分 类 号：R739.4[医药卫生—肿瘤]