相变型VO_2薄膜的制备及其特性的研究  

Fabrication of phase-transition VO_2 thin films and properties

作　　者：周少波[1] 王双保[1] 陈四海[1] 易新建[1] 

机构地区：[1]华中科技大学光电工程系,湖北武汉430074

出　　处：《红外与激光工程》2005年第1期27-30,共4页Infrared and Laser Engineering

基　　金：国家自然科学基金资助项目(60106003)

摘　　要：利用反应离子束溅射和后退火工艺制备一种新的相变型VO2薄膜,对该薄膜进行电学测试、XRD和光学透过率的测试。这种工艺制备出的相变型VO2薄膜相变温度更接近室温,XRD显示这种薄膜中有VO2、V2O5成分的存在。对这种薄膜的光学透过率测试表明,低温下薄膜的透过率是高温下薄膜透过率的近5倍。通过实验可以看出,氧气分压、退火温度、退火时间是影响制备新型相变型VO2薄膜的重要因素。A kind of novel phase -transition VO2 thin films has been fabricated by reactive ion -splitting and post annealing. Various measurements such as electrical test,X-ray diffraction (XRD)and optical transmittance were carried out on the vanadium dioxide thin films.The phase transition temperature of the phase -transition thin films is more nearly close to room temperature. The SEM grmicrograph shows that the thin films are smooth and compact.A conclusion is drawn that the thin films contain V2O5 except for VO2 through its XRD,which indicates that VO2 and V2O5 both exist in the thin films.And the optical transmittance test indicates that the transmittance of the VO2 thin films at lower temperature is as five times as that at higher temperature.Experimental results show that partial oxygen pressure,annealing temperature and annealing time are the key factors of fabrication of the new phase -transition vanadium dioxide thin films.

关 键 词：VO2 薄膜 反应离子束溅射 相变特性 薄膜制备 

分 类 号：TN304.205[电子电信—物理电子学]