脉冲激光沉积Ti_(50)Ni_(36)Cu_(14)薄膜的成分均匀性  

Composition Uniformity of Pulse Laser Depositing Ti_(50)Ni_(36)Cu_(14)Films

作　　者：李亚东[1] 骆苏华[2] 高伟健[3] 

机构地区：[1]苏州大学材料科学工程学院,江苏苏州215021 [2]中科院上海微系统与信息技术研究所,上海200050 [3]苏州大学分析测试中心,江苏苏州215006

出　　处：《材料科学与工程学报》2005年第1期45-47,共3页Journal of Materials Science and Engineering

基　　金：江苏省教育厅指导性项目 (0 1KJD430 0 0 1 1 )

摘　　要：采用脉冲激光沉积 (PLD)技术制备了Ti50 Ni36 Cu1 4合金薄膜。研究表明 ,PLD合金薄膜的成分与沉积距离(基片 靶间距 )、激光脉冲频率有较大关系。当沉积距离 (D)为 2 0～ 30mm时 ,可获得成分均匀稳定的合金薄膜 ;当其它条件相同 ,激光脉冲频率 (F)为 5Hz时 ,合金薄膜与靶成分更为接近。采用PLD技术制备的Ti50 Ni36 Cu1 4合金薄膜成分均匀性较好 ,同时与磁控溅射薄膜相比PLD薄膜的平均成分更加接近靶体。采用本工艺获得的Ti50 Ni36 Cu1 4薄膜的平均成分为 4 7.5 3at.%Ti、38.90at.%Ni和 13.5 7at.%Cu。In this paper, the Ti_ 50Ni_ 36Cu_ 14 alloy films were prepared by Pulse Laser Deposition (PLD) technology. The research showed that the micro-area compositions were dependent on the deposition conditions, i.e. the distance from center of the substrate to target (D) and pulse frequency (F) etc. The composition uniformity of PLD alloy films was better and the average compositions of films were more closed to the target comparing with RF-sputtering deposition. The average composition of the Ti_ 50Ni_ 36Cu_ 14 alloy films was 47.53at.%Ti、38.90 at.% Ni and 13.57 at.% Cu.

关 键 词：PLD技术 Ti50Ni36Cut14 合金薄膜 成分均匀性 

分 类 号：TN248.2[电子电信—物理电子学]