(Sr^(2+),Bi^(3+),Si^(4+),Ta^(5+))掺杂的TiO_2压敏陶瓷中Ta^(5+)的研究  

Investigation of Ta^(5+) in (Sr^(2+),Bi^(3+),Si^(4+))- added TiO_2-Based Varistor

作　　者：孟凡明[1] 胡素梅[2] 傅刚[3] 周方桥[3] 

机构地区：[1]安徽大学物理与材料科学学院,安徽合肥230039 [2]茂名学院技术物理系,广东茂名525300 [3]广州大学固体物理与材料研究实验室,广东广州510405

出　　处：《材料科学与工程学报》2005年第1期96-98,共3页Journal of Materials Science and Engineering

摘　　要：研究Ta2 O5对 (Sr,Bi,Si,Ta)掺杂的TiO2 基压敏陶瓷压敏特性及电容特性的影响 ,发现按配方TiO2+0 .3%(SrCO3+Bi2 O3+SiO2 ) +0 .1 %Ta2 O5配制的样品具有最低压敏电压 (E1 0mA =1 .2V·mm- 1 )、最大相对介电常数 (εra=2 .0 0 2× 1 0 5)及较小非线性系数 (α =2 .6 )。考虑到材料的低压敏电压和大介电常数的要求 ,Ta2 O5最佳掺杂量在 0 .0 85mol%与 0 .1mol%之间。The electrical properties such as breakdown voltage and electric capacity of TiO_2-Based Varistor with various Ta_2O_5 con-tent were investigated. It was found that the sample with TiO_2+0.3%(SrCO_3+Bi_2O_3+SiO_2) +0.1%Ta_2O_5 components displayed minimum breakdown voltage of 1.2V.mm-1,maximum apparent dielectric constant of 2.002×105 (measured at 1 kHz) and smaller nonlinear exponent of 2.6.The optimal Ta_2O_5 content is between 0.085mol% and 0.1mol% considering the requirement for low breakdown voltage and large dielectric constant.

关 键 词：TiO2基压敏陶瓷 压敏电压 非线性系数 介电常数 

分 类 号：TN304[电子电信—物理电子学] TN379