SOI波导弯曲损耗改善方法的研究  

RESEARCH ON IMPROVED METHODS OF REDUCTION OF BEND LOSS OF SILICON-ON-INSULATOR WAVEGUIDES

作　　者：陈媛媛[1] 余金中[1] 陈少武[1] 樊中朝[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《红外与毫米波学报》2005年第1期53-55,共3页Journal of Infrared and Millimeter Waves

基　　金：国家科技部"973"计划(G2000 03 66);"863"计划(20002AA312060);国家自然科学基金资助项目(60336010)

摘　　要：采用有效折射率方法EIM (EffectiveIndexMethod)和二维束传播算法 (2D BPM)对SOI(Silicon on insulator)波导弯曲损耗的改善方法进行了模拟分析.模拟发现,在波导连接处引入偏移量和在波导外侧刻槽等两种不同方法都能有效减小弯曲损耗,并且后者的效果更明显.同时通过实验获得了验证.对R=16mm、横向位移为 70μm的弯曲波导,通过刻槽方法将插入损耗降低了 5dB,基本消除了弯曲所带来的附加损耗.Improved methods of reduction of bend loss of silicon-on-insulator waveguides were simulated and analyzed by means of effective index method (EIM) and two dimensional beam propagation method (2D-BPM). The simulation results indicate that two different methods, one of which are introducing an offset at the junction of two waveguides and the other is etching groove at the outside of bend waveguide, can decrease bend loss. And the later one is more effective. Meanwhile, experiments validate them. By etching groove, the insertion loss of bend waveguide of R = 16mm, transverse displacement 70mum was decreased 5dB. And its bend loss was almost eliminated.

关 键 词：弯曲损耗 弯曲波导 SOI 有效折射率 束传播算法 插入损耗 附加损耗 效果 实验 方法 

分 类 号：TN252[电子电信—物理电子学] TN253