光CVD系统气流模式分析  

Analysis of Gas Flow Mode in Fhoto-CVD System

作　　者：王兴民[1] 孙建诚[1] 

机构地区：[1]西安电子科技大学微电子所,西安710071

出　　处：《微电子学与计算机》1993年第11期42-43,46,共3页Microelectronics & Computer

摘　　要：本文对光CVD反应系统的气流模式进行了分析,讨化了4种不同的气流流动状态,计算出附面层线性底层厚度为0.163mm,提出用保护气体隔离工作气体,以防止石英窗内侧面淀积薄膜的可行性.The gas floe mode in Photo-CVD system has been analysied in this paper. Four kinds of different status of gas flow was discussed. The thickness of linear bottom layer of boundary-layer was calculated to be 0.163mm. It is presented that a kind of passive gas be used to separate the reactive gas from the quartz window to avoid the possibility of film deposition on the inner surface of the window.

关 键 词：CVD 气流模式 分析 化学汽相沉积 

分 类 号：TN305[电子电信—物理电子学]