GaAlN/GaN量子阱中电子的激发态极化及其压力效应  

Pressure effect on the polarization of electronic excited state in a GaN/GaAlN quantum well

作　　者：吴晓薇[1] 郭子政[2] 阎祖威[1] 

机构地区：[1]内蒙古农业大学基础课部,内蒙古呼和浩特010018 [2]内蒙古大学理工学院物理系

出　　处：《量子电子学报》2005年第1期75-80,共6页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金(10264003)内蒙古教育厅重大项目(NJ02054)资助课题

摘　　要：考虑了纤锌矿结构材料的各向异性造成的内建电场的作用以及各向异性造成的应变张量和静压形变势与各向同性材料的差别。在此基础上计算了GaN/GaAlN量子阱内电子的激发态极化。研究了压力(应变)对电子激发态极化的影响。结果表明,电子势垒高度、电子有效质量和电子激发态极化均随压力线性下降,但由于内建电场的作用造成电子波函数高度局域化,上述变化的幅度不大。The pressure effect on the polarization of electronic excited state in a GaN/GaAlN quantum well is studied. The effects of the anisotropy of the wurtzite structure on the strain and the hydrostatic deformation potential are considered, including the build-in internal electric field. It is shown that, all of the electronic barrier height, the electronic effective masses and the strength of the polarization of the electronic excited state decrease linearly with pressure. But because of the localization of the electronic wave functions caused by the build-in internal electric field, the decreases are small.

关 键 词：光电子学 量子阱 内建电场 激发态极化 静压 

分 类 号：O471[理学—半导体物理]