组分对SI-GaAs单晶特性的影响  

INFLUENCE OF MELT STOICHIOMETRY ON CHARACTERISTICS OF SI-GaAs SINGLE CRYSTAL

作　　者：谢自力[1] 夏德谦[1] 陈宏毅[1] 朱志明[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《微细加工技术》1993年第4期40-43,共4页Microfabrication Technology

摘　　要：本文报道了从不同组分熔体中生长半绝缘砷化镓(SI-GaAS)单晶的实验。结合其国内外组分与电学特性研究报道,分析了不同组分熔体生长的SI-GaAs单晶特性。The experiments of SI-GaAs single crystal growth from different stoichiometry melt are described. Refering to the research reports on the relation ship of SI-GaAs characteristics with it's stoichiometry the characteristics of SI-GaAs single crystwl growing from different stoichiometry melt are analyzed.

关 键 词：单晶 半绝缘 砷化镓 外延生长 熔体组份 

分 类 号：TN304.23[电子电信—物理电子学] O782.9[理学—晶体学]