半导体GaAs-（GaAl）As多量子阱的光谱性质的研究  

STUDY ON THE SPECTRAL PROPERTIES IN SEMICONDUCTOR GaAs-Ga_(0.65) Al_(0.35)As QUANTUM WELLS

作　　者：张伟力[1] 马丛笑[1] 郑才平[1] 张喜田[1] 

机构地区：[1]哈尔滨师范大学

出　　处：《哈尔滨师范大学自然科学学报》2000年第5期16-18,共3页Natural Science Journal of Harbin Normal University

摘　　要：我们利用光致发光(PL)和激发光谱(PLE)技术研究了GaAs量子阱的光谱性质，观测到在GaAs量子阱中上转换发光，首次提出在GaAs量子阱中可能实现激光制冷，探索了光谱的发光机理。The spectral properties in GaAs-Ga 0.65 Al 0.35 As multi-quantum well structures have been developed by using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy, the up-conversion of luminescence in GaAs-Ga 0.65 Al 0.35 As multiquantum wells is observed. We put forward the possibility of laser cooling in semiconductor GaAs MQW for the first time, the mechanism of luminescence on the spectrum in GaAs MQW is researched.

关 键 词：光谱性质 多量子阱 上转换发光 激发光谱 光致发光 半导体 发光机理 激光 

分 类 号：TN248[电子电信—物理电子学] TN304