硅光电集成的曙光──多孔硅的电致发光  

The Prospect of Silicon Optoelectronic Integration: Current-Induced Light emission from Porous silicon

作　　者：施洪涛 郑有炓[1] 

机构地区：[1]南京大学物理系,南京210008

出　　处：《物理》1993年第12期715-719,共5页Physics

摘　　要：近两年来，多孔硅的发光特性已经成为国际半导体界的研究热点．介绍了多孔硅器件电致发光方面的研究进展，给出了多孔硅器件的基本结构以及相应的光谱响应，阐述了多孔硅固态器件的电致发光在硅光电集成发展过程中的重要意义以及目前尚未解决的问题，展示了它们在技术领域中的潜在应用．During the past two years, many research groups have been focusing great interest on the study of properties of luminescent porous silicon (PS). In this paper, we describe the current progress in electroluminescent PS devices, various PS device structures and corresponding optoelectronic parameters, combining with our recent research in this region. The importance of electroluminescent PS devices in silicon optoelectronic integration, their potential applications in technologies and some unsolved problems are also included.

关 键 词：多孔硅 电致发光 发谱响应 

分 类 号：O472.3[理学—半导体物理]