Cs/Ir(001)吸附系统的功函数与电子转移  

WORK FUNCTION AND CHARGE TRANSFER OF OVERLAYER-SUBSTRATE SYSTEM: Cs ON Ir (001)

作　　者：陈陆君 王宁 罗恩泽[1] 

机构地区：[1]西安电子科技大学物理系,西安710071 [2]北京真空电子器件研究所,北京100016

出　　处：《物理学报》1993年第7期1149-1152,共4页Acta Physica Sinica

摘　　要：本文借助对真空区波函数的多能量参数函数与微分并用法和jellium球/slab模型,计算了Cs吸附于Ir(001)表面的功函数,得到了一条改善的φ-Q曲线。对于清洁表面,功函数由从前的6.6eV减小到5.84eV,后者更符合实验(～5.5eV)。在极小处,功函数由约0.2eV上升到1.02eV,而实验值是1.3eV。此外,还给出了真空势分布及jellium与slab间的电子转移随Q的变化关系。The work function of Ir(100) surface coated with Cs overlayer is investigated by using jellium sphere/slab model containing three layers of Ir slab. A work function-coverage curve much reasonably closer to the experimental one is lbtained. The theoretical value of work function of clean surface is reduced to 5. 84 eV from the former result of 6.6 eV, which is in good agreement with experiment (5.5 eV). At the minimum, work function rises to 1. 02 eV from former one (about 0. 2 eV), which is much closer to the experimental result (about 1. 3 eV). The relationship between the appearance of work function-coverage curve and the transfer of valence electrons in jellium sphere-vacuum region is analyzed.

关 键 词：铯 铱 吸附 亥姆霍兹函数 电子转移 

分 类 号：O484[理学—固体物理]