(110)取向的调制掺杂GaAs-AIGaAs单异质结的光致荧光谱  

PHOTOLUMINESCENCE OF (110) MODULATION-DOPED GaAs-AlGaAs HETEROSTRUCTURES

作　　者：程文芹[1] 刘双[1] 周均铭[1] 刘玉龙[1] 朱恪[1] 

机构地区：[1]中国科学院物理研究所,北京100080

出　　处：《物理学报》1993年第9期1529-1531,共3页Acta Physica Sinica

摘　　要：测量了含碳量高低不同的(110)取向的调制掺杂GaAs-Al_(0.3)Ga_(0.7)As单异质结在4.2K下的光致荧光谱。在含碳量高的样品中,出现了强的沟道二维电子到受主的复合荧光峰;而在含碳量很低的样品的光致荧光中则只出现体GaAs的荧光峰。The photoluminescence spectra of ( 110 ) modulation-doped GaAs-AlGaAs het-erostructures grown under high and low carbon background were measured at 4. 2K. For high carbon specimen the luminescence peak from the recombination of 2D electrons in channel with holes bound to neutral acceptors was observed, while for low carbon specimen only lines related to bulk GaAs were observed.

关 键 词：砷化镓 异质结 光致发光 荧光 

分 类 号：O472.3[理学—半导体物理]