由电阻率的准静态测量研究薄膜晶粒的生长动力学  

STUDY ON GRAIN GROWTH KINETICS OF THIN FILMS BY MEANS OF QUASI-STATE MEASUREMENT OF RESISTIVITY

作　　者：王晓平[1] 赵特秀[1] 季航[1] 董翊 卞波 

机构地区：[1]中国科学技术大学物理系,合肥230026

出　　处：《物理学报》1993年第10期1642-1647,共6页Acta Physica Sinica

摘　　要：提出一种用薄膜电阻率的准静态测量来进行薄膜晶粒生长动力学研究的方法。在超高真空系统中用直流溅射制备Pd膜,然后测量不同温度下Pd膜电阻率与退火时间的关系。利用二流体模型推算出对应晶粒尺寸大小的变化,并和TEM结果进行比较。在此基础上进一步分析了退火温度对薄膜中晶粒尺寸变化所起的作用,拟合出晶粒的生长曲线。实验结果表明晶粒长大是一种热激活生长过程,激活能约为0.53eV。A method for studying grain growth kinetics of thin films by means of quasi-state measurement of films resistivity is proposed. Pd films is prepared by d c sputtering in ultra-high vacuum, and relationship between resistivity of Pd films and annealling time is measured at different tempertures The change of grain size of Pd films can be calculated by using the two-fluid model and can be compared with results of TEM. It is found that annealling temperature plays an important role in grain growth process and grain growing curve is imitated. The experiment results indicate that grain growth process is thermal activated and the activation energy is about 0. 53eV.

关 键 词：电阻率 薄膜 晶粒长大 准静态测量 

分 类 号：O484.1[理学—固体物理]