P^+掺杂浓度分布对硅半导体器件正向特性的影响  

A STUDY ON THE INFLUENCE OF P^+ DOPING CONCENTRATION DISTRIBUTION ON THE FORWARD CONDUCTION CHARACTERISTICS OF SILICON SEMICONDUCTOR DEVICES

作　　者：徐传骧[1] 李仰平[1] 崔秀芳[1] 金兰香[2] 翟保定[2] 

机构地区：[1]西安交通大学 [2]铁道部永济电机厂

出　　处：《西安交通大学学报》1993年第4期53-60,共8页Journal of Xi'an Jiaotong University

基　　金：国家自然科学基金

摘　　要：为提高硅半导体器件的正向导电特性,文中对器件浓硼扩散、磷扩散和烧结铝电极后P^+-P区掺杂浓度分布、少子寿命等因素的影响进行了实验研究.结果表明:对于烧铝电极器件浓硼扩散改善压降作用主要取决于能否提高器件的少子寿命;磷扩散工艺不当,引起结片阳极面反型,会造成正向压降过高而导致废品;采用烧结铝电极工艺形成的器件,铝硅接触处半导体表面浓度约为10^(18)个/cm^3,与原始表面浓度无明显关系;用P^+取代P^+-P区对降低压降明显有效.对以上实验结果,作者应用P—N结正向导电理论进行了分析和研讨.In order to improve the forward conduction characteristics of silicon semiconductor devices, a comprehensive study of the influences of boron diffusion, phosphorous diffusion, doping concentration distribution in P^+-P region of sintered Al-Mo electrode and the minority carrier life on the forward conduction characteristics is performed. It is shown that for devices of sintered Al electrode whether the boron diffusion can improve the drop characteristics mainly depends on the minority carrier life. An inappropriate diffusion process of phosphorous may give rise to forming an opposite type of anode surface and a very high amplitude of the forward drop, leading to the disuse of the devices. For the devices made from sintered Al electride the semiconducter surface concentration in the contact region between Al and Si is approximately 10^(18)r/cm^2 which has no distinct relationship with the original surface concentration. It is also shown that the replacement of P^+-P by P^+ can effectively reduce the drop value. These experimental results have interpreted by using the semiconductor forward conduction theory.

关 键 词：半导体器件 导电性 掺杂浓度分布 

分 类 号：TN303[电子电信—物理电子学]