Ga_2O_3∶Mn电致发光薄膜的微结构及光谱特性研究  

Microstructure and Spectral Properties of Ga_2O_3∶Mn Electroluminescent phosphor Thin Films

作　　者：张修太[1] 黄蕙芬[1] 

机构地区：[1]东南大学电子工程系,南京210096

出　　处：《电子器件》2004年第4期581-584,共4页Chinese Journal of Electron Devices

基　　金：江苏省自然科学基金项目支持 ( BK2 0 0 1 0 1 2 )

摘　　要：采用电子束蒸发法在硅衬底或 Ba Ti O3陶瓷基片上沉积了 Ga2 O3∶Mn电致发光膜 ,并进行了不同温度热处理 ,制备了电致发光器件。用 X射线衍射 ( XRD)分析了 Ga2 O3∶ Mn薄膜晶体结构 ;用荧光分光光度计测试了电致发光器件的发射光谱。研究了 Ga2 O3∶ Mn薄膜的晶体结构与其光谱特性之间的关系。实验结果表明 ,Ga2 O3∶ Mn薄膜结晶度随热处理温度的提高而提高 ,且晶体结构和结晶取向也随之改变 ;经 5 0 0℃热处理的 Ga2 O3∶ Mn薄膜电致发光器件发绿光 ,其光谱主峰分布在 495～ 5 3 5 nm之间 ,且随驱动电压增高 。Ga_2O_3∶Mn electroluminescent phosphor thin film was deposited on the silicon substrates or thick BaTiO_3 ceramic sheets by electron beam evaporation. All these phosphor thin films were post-annealed at different temperatures in atmosphere, and then the process to prepare the TFEL(Thin-film electroluminescent) devices had been finished. The crystal structures of Ga_2O_3∶Mn thin films were analyzed by X-ray Diffraction(XRD). The spectral properties of TFEL devices were measured by fluorescent spectrophotometer. The relationships between the crystal structures of Ga_2O_3∶Mn thin films and their spectral properties were studied. Experimental results show that by enhancing the post-annealing temperature, the crystallization of Ga_2O_3∶Mn thin film is improved, and the crystal structure and orientation are changed, too. The colour of emitting light from Ga_2O_3∶Mn phosphor thin films annealing at 500 ℃ is green, and its wavelength ranges mainly from 495 nm to 535 nm. With the increasing of driving voltages, the blue shift of spectral peaks appears.

关 键 词：电致发光 电子束蒸发 Ga2O3:Mn薄膜 晶体结构 荧光分光光度计 

分 类 号：O484[理学—固体物理] O482[理学—物理]