集成化单电子器件研究进展  

The Latest Progress of Integrated Single-Electron Devices

作　　者：杨银堂[1] 王帆[1] 朱樟明[1] 翟艳[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《电子器件》2004年第4期772-776,共5页Chinese Journal of Electron Devices

摘　　要：传统 MOSFET结构正以较快的发展速度接近其物理极限 ,而单电子器件将成为新型的高性能集成化器件结构。本文采用量子点及其库伦阻塞效应等概念对单电子器件的工作原理进行了系统分析 ,并介绍了单电子器件在存储器和高灵敏度静电计方面的应用 。Conventional MOSFET architectures are approaching rapidly fundamental physical limitations, while single-electron devices are expected to be a new type of integrated device architecture with high performance. The operating principles of single-electron devices is analyzed systematically using the concepts of quantum dot and Coulomb blockade effect, etc., and the applications of the single-electron devices in memory and high sensitive electrometer are also introduced. The new developing direction and the problems which are faced with the single-electron devices are pointed.

关 键 词：单电子器件 库伦阻塞 量子点 单电子存储器 单电子静电计 

分 类 号：TN452[电子电信—微电子学与固体电子学]