用激光喇曼光谱分析研究半导体中杂质  

Analytic Studies of Impurities in Semiconductors by Raman Spectroscopy

作　　者：连世阳[1] 杨锦赐 陈张海[1] 廖远琰[2] 

机构地区：[1]厦门大学物理学系 [2]厦门大学化学系

出　　处：《厦门大学学报（自然科学版）》1993年第4期434-438,共5页Journal of Xiamen University：Natural Science

摘　　要：用杂质振动喇曼散射和电子喇曼散射研究半导体中杂质,结果表明:杂质喇曼散射可以作为强有力的技术检测半导体的杂质和估计掺杂浓度,使用这种非破坏性的检测方法具有很好的空间分辨力(几个μm^2),而且共振杂质喇曼散射有极高的检测灵敏度,可达10^(-9)的数量级。Impurity vibrational Raman scattering and electronic Raman scatteringdue to impurities are used respectively to study impurities in semiconductors. It is shown that impurity Raman scattering can be used as a powerful technique to test impurities and estimate dopant concentrations in semiconductors. This nondestructive testing method has high spatial resolution (a few μm2), and resonant impurity Raman scattering will possess excellent sensitivity (a few 10-9).

关 键 词：半导体 杂质 散射谱 激光 

分 类 号：O649.3[理学—物理化学]