多孔硅薄层的正电子湮灭寿命研究  

Analysis of the porosity of porous silicon thin layers by positron annihilation lifetime spectroscopy

作　　者：蒋中英[1] 黄红波[1] 徐寒[1] 黄彦君[1] 夏元复[1] 

机构地区：[1]南京大学物理系

出　　处：《物理》2005年第2期147-150,共4页Physics

基　　金：国家自然科学基金(批准号: 19835050)重点资助项目

摘　　要：用阳极氧化法按不同腐蚀条件制备的多孔硅,其薄层厚度仅为几十纳米,远小于22Na源的正电子平均射程.文章提出了一种用22Na的正电子测量体寿命谱并扣除基片贡献的方法,来确定多孔硅薄层的平均孔径.A porous silicon thin layer was prepared by anodic oxidation under different corrosion conditionEmails. The layer thickness was a few tens of nanometers, which is much smaller than the average range of positrons from a 22Na source. The mean pore volume and specific surface area in the samples were measured with 22Na positron life spectroscopy, by measuring the bulk lifetime spectrum of porous silicon and then deducting the lifetime spectrum of the substrate.

关 键 词：正电子 湮灭 多孔硅 平均 基片 薄层 射程 层厚 寿命 研究 

分 类 号：O471[理学—半导体物理]