BGO熔体急冷自发结晶形貌  

Crystallographic Morphology of BGO Crystallized Spontaneously from Its Melts

作　　者：宋桂兰[1] 姚冬敏[1] 齐雪君[1] 袁兰英[1] 仲维卓[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海201800

出　　处：《人工晶体学报》2004年第6期955-959,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金 (No .5 0 331 0 40 ) ;中国科学院创新工程 (KJCXZ SW 1 0 5 0 3)资助

摘　　要：本文研究了BGO熔体在急冷的条件下自发结晶的显露形貌。在急冷的条件下 ,组成BGO的各个面族自由发育。 { 3 2 1 }面族、{ 2 1 1 }面族和 { 1 1 1 }面族都是按 [GeO4]4-四面体以顶角相连的化学键链生长发育的 ,生长速度快 ,优先显露 ,在熔体急冷时保留下来。表面形貌显露不完整的 { 1 0 0 }面族是 [GeO4]4-四面体以棱相连所对应的面族 ,生长速度较慢 ,尚未显露完全熔体就已冷却。从生长速度考虑 ,在实际生长晶体时以 [3 2 1 ]、[2 1 1 ]、[1 1 1Crystallographic morphology of BGO crystallized spontaneously from its melts was investigated in this paper. The {321}, {211}, {111} faces of BGO crystal were developed through the connection of the Ge-O4 tetrahedron by sharing their vertex angles. These faces grow so rapidly that they have priority to appear and retain as the melt supercooled. The surface morphology of the {100} faces appears incompletely because the face corresponds with the ones composed of the Ge-04 tetrahedron linked by edges. As a result, the {100} face grows slowly and appears imperfectly before the melt cooled. To choose [321], [211], [111] as the directions of BGO crystal are favorable to obtain fast growth rate.

关 键 词：熔体 急冷 结晶 组成 表面形貌 冷却 研究 四面体 化学键 BCO 

分 类 号：O123[理学—数学] TQ320[理学—基础数学]