高温闪烁晶体GSO:Ce的生长及其光谱性质  

High-temperature Growth and Spectra Characteristics of GSO:Ce Crystal

作　　者：介明印[1] 赵广军[1] 曾雄辉[1] 何晓明[1] 张连翰[1] 夏长泰[1] 徐军[1] 

机构地区：[1]中国科学院上海光学精密机械研究所

出　　处：《人工晶体学报》2004年第6期991-994,共4页Journal of Synthetic Crystals

摘　　要：本文用中频感应提拉法生长出尺寸为30mm× 1 5 0mm ,质量好的GSO :Ce晶体。并对晶体进行XRD测试和差热分析 ,初步分析引起晶体开裂的原因 ,最后测试了晶体室温下的吸收和荧光光谱等 ,GSO :Ce晶体发射峰为4 33nm ,晶体在大于 4 0 0nm范围其光透过率大于 80 %。An integrate quality of GSO:Ce scintillation crystal with the diameter of 30mm, length of 150mm was grown by Czochralski technique (CZ). XRD and DTA curves of the powder from the GSO boule were measured to interpret the cracking of the boule. The absorption and fluorescence spectra at room temperature were also investigated, from which we examined that the emission peak of GSO: Ce crystal is at 433 nm, and the transmission in the region of over 400 nm is larger than 80%.

关 键 词：高温闪烁晶体 提拉法 光谱性质 光透过率 晶体开裂 中频感应 荧光光谱 差热分析 XRD 室温 

分 类 号：O782.5[理学—晶体学]