n-GaN肖特基势垒紫外光探测器的电子辐照效应  

Effects of Electron Irradiation on n-GaN Schottky Barrier UV Detector

作　　者：刘畅[1] 袁菁[1] 钟志亲[1] 伍登学[1] 龚敏[1] 

机构地区：[1]四川大学微电子学系微电子技术四川省重点实验室,四川成都610064

出　　处：《半导体光电》2005年第1期26-29,共4页Semiconductor Optoelectronics

基　　金：辐射物理及技术教育部重点实验室资助项目.

摘　　要：研究了n型Au/GaN肖特基势垒紫外光探测器的电子辐照失效机理。从实验中观测到,随着电子辐照注量的不断增加,Au/GaN间辐照诱生的界面态引起器件的击穿电压明显减小,反向漏电流逐渐增大。辐照诱生的深能级缺陷导致紫外光探测器对较长波长光的吸收,使得UV探测器中可见光成分的背景噪声增加。同时,对辐照后的 GaN 肖特基紫外光探测器进行了100℃以下的退火处理,退火后,器件的电流 电压特性有所改善。The electron irradiation-induced failure mechanism of n-type Au/GaN Schottky barrier UV detectors is investigated. The experimental results indicated that the reverse breakdown voltage is obviously reduced and the reverse leakage current is slightly enlarged with the increase of the electron irradiation dose, due to the fact that the damage at Au/GaN Schottky interface exists. Electron-irradiation-induced deep levels will lead to increase visible light background noise in Au/GaN Schottky barrier UV detector. In addition, the electrical characteristics of GaN Schottky barrier UV detectors irradiated are improved after annealed at (below or equal to) 100°C.

关 键 词：GaN紫外光探测器 肖特基势垒 电子辐照 辐照失效 金属/半导体界面 退火 

分 类 号：TN36[电子电信—物理电子学]