载能钼团簇束与单晶硅碰撞室温下合成二硅化钼  

Synthesis of MoSi_2 by energetic molybdenum cluster beam deposited on monocrystalline silicon at room temperature

作　　者：李公平[1] 张小东[1] 丁宝卫[1] 丁印锋[2] 刘正民[1] 朱德彰[2] 张志滨[2] 包良满[1] 

机构地区：[1]兰州大学物理科学与技术学院现代物理系,兰州730000 [2]中国科学院上海应用物理研究所,上海201800

出　　处：《核技术》2005年第3期221-223,共3页Nuclear Techniques

摘　　要：用一种新型磁控溅射气体凝聚团簇源产生 Mon 团簇束,当团簇束分别在偏压为 0、1、3、5、10 kV 的–电场中加速后,沉积在室温下的 P 型 Si(111)衬底上,获得 Mo/Si(111)薄膜样品。用 XRD 分析表明,在室温下,偏压≤5 kV 团簇束沉积和常规磁控溅射沉积获得的 Mo/Si(111) 样品,其界面均无二硅化钼(MoSi2)生成;偏压=10 kV 时,团簇束沉积其界面直接有 MoSi2生成。对于团簇束沉积,当偏压大于一定值时(在本实验条件下偏压≥3 kV),薄膜才开始以 Mo(110)择优取向生长。Mon- cluster beam was produced by a new type magnetron sputter gas aggregation cluster source. The beam was accelerated by the voltage of 0, 1, 3, 5, 10 kV and deposited onto polished p-type Si(111) substrate surface at room temperature, respectively, and then the thin film samples of Mo/Si(111) were prepared. X-ray diffraction analysis showed that there was no MoSi2 thin film formation in the area interface of Mo/Si(111) samples deposited by using both regular magnetron sputter and new type cluster source when the accelerated voltage was no more than 5 kV, whereas at the voltage of about 10 kV, there was MoSi2 thin film formed in the area interface of Mo/Si(111) samples deposited by using the new type cluster source. Only for the accelerated voltage higher than a threshold voltage ( greater than or equal 3 kV in this experiment), can the (110) oriented Mo thin film by the cluster beam deposition grow up.

关 键 词：钼团簇束 单晶硅 碰撞沉积 二硅化钼(MoSi2) 

分 类 号：O484[理学—固体物理]