栅氧层厚度与CMOS运算放大器电离辐射效应的关系  

Influence of thickness of gate oxide layer on the irradiation response of CMOS op-amp

作　　者：陆妩[1] 任迪远[1] 郭旗[1] 余学锋[1] 郑毓峰[2] 张军[2] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]新疆大学,乌鲁木齐830046

出　　处：《核技术》2005年第3期227-230,共4页Nuclear Techniques

摘　　要：介绍了在干氧和氢氧合成两种不同工艺和不同栅氧层厚度情况下,CMOS 运算放大器电路的电离辐照响应规律。并通过对其单管特性及内部单元电路辐照变化的分析比较,探讨了栅氧层厚度的变化与运放电路辐照损伤之间的相互依赖关系。结果显示,适当地减薄栅氧层厚度,可相应地减少辐照感生氧化物电荷和界面态引起的跨导衰降,从而使 CMOS 运放电路的抗辐射特性得到明显的改善。By comparing the characteristic changes of transistors, subsidiary and entire circuits of CMOS amplifiers with different thickness of gate oxide layer, influence of the thickness of gate oxide layer on the op-amps' irradiation response was investigated. It was shown that by lessening the thickness of gate oxide layer properly, degradation of transconductance of the op-amps' transistors induced by radiation-generated oxide charges and interface states can be reduced, therefore, the ability of CMOS amp to resist radiation can be improved.

关 键 词：CMOS运算放大器 跨导 栅氧层 氧化物电荷 界面态 

分 类 号：TN72[电子电信—电路与系统]