氧化锌薄膜热退火特性的研究  

Study on the Effects of Annealing on ZnO Film

作　　者：曹广军[1] 刘光廷[2] 周子新[3] 杨龙其 

机构地区：[1]华中理工大学固体电子学系,武汉430074 [2]东南大学电子工程系,南京210018 [3]四川压电与声光技术研究所,重庆630060

出　　处：《压电与声光》1993年第5期51-55,共5页Piezoelectrics & Acoustooptics

摘　　要：对退火前后氧化锌薄膜的结构特性、化学组分及化学价态,以及缺陷特性进行了详尽的研究.结果表明,低温热退火是改善氧化锌薄膜结构特性、化学组分及化学价态,并且减少缺陷的良好方法.Structure of ZnO film,chemical states of Zn and O in the film,and the defect properties are investigated in detail for both the pre-annealed and annealed samples. It is proved that annealing in O2 atmo-sphere at a low temperature is a practical way to improve the structure of the film and the Chemical states of Zn and O in the film, and decrease the defect density as well.

关 键 词：氧化锌薄膜 半导体材料 退火 缺陷 

分 类 号：TN304.055[电子电信—物理电子学]