MZOS结构界面特性的研究  

Study on the Interface Properties of MZOS Structure

作　　者：曹广军[1] 刘光廷[2] 周子新[3] 杨龙其 

机构地区：[1]华中理工大学固体电子学系,武汉430074 [2]东南大学电子工程系,南京210018 [3]四川压电与声光技术研究所,重庆630060

出　　处：《压电与声光》1993年第6期49-52,67,共5页Piezoelectrics & Acoustooptics

摘　　要：分析了MZOS结构及其Si—SiO_2子系统的C-V特性,发现ZnO中的氧空位和溅射工艺过程在Si—SiO_2界面引入的界面电荷是影响MZOS结构界面特性的主要因素.研究还表明,低温热退火可以改善MZOS结构的界面特性.The C-V curves of MZOS structures and the Si-SiO2 subsystems are measured. Analysis on these curves shows that shortage of oxygen in the ZnO film and interface charges caused during the sputtering process are the main factors affecting the interface properties of the MZOS structures. It is also proved that annealing in oxygen atmosphere at a low temperature could improve the interface properties of MZOS structures.

关 键 词：MZOS结构 界面特性 氧化锌薄膜 

分 类 号：TN65[电子电信—电路与系统]