GaN基量子点结构的喇曼特征  

Raman Characteristics of GaN-based Quantum Dot Structure

作　　者：顾海涛[1] 熊贵光[1] 

机构地区：[1]武汉大学物理科学与技术学院,武汉430072

出　　处：《光学与光电技术》2003年第1期38-40,共3页Optics & Optoelectronic Technology

基　　金：武汉市科委国际合作项目(批准号:017010121)

摘　　要：采用量子力学的微扰理论,对GaN基量子点结构的喇曼频移进行分析。在喇曼实验中,观察InGaN/GaN量了点结构的E_2和A_1(LO)的模式,并发现实验中样品的喇曼频移与GaN的体材料相比,有着明显的红移。Raman scattering of GaN-based quantum dots has been analyzed by quantum perturbation theory. The E2 and A1(LO) modes of quantum dots, InGaN/GaN, has been observed experimentally. And comparing the results given by quantum dots with that given by bulk sample, it can be seen that there is a red-shift in Raman spectra.

关 键 词：量子点 喇曼频移 微扰理论 

分 类 号：TN248.4[电子电信—物理电子学]