有机介质中陷阱产生的等温电流研究  

ISOTHERMAL CURRENT INVESTIGATION ON TRAP CREATION IN ORGANIC DIELECTRICS

作　　者：刘付德[1] 王玉芬[2] 杨百屯[2] 刘耀南[2] 

机构地区：[1]华南理工大学 [2]西安交通大学

出　　处：《应用科学学报》1993年第4期303-310,共8页Journal of Applied Sciences

摘　　要：考虑现有测量方法难以区分电子陷阱和空穴陷阶的困难,该文提出表面电位模型,实现了对电子陷阱能级密度和空穴陷阱能级密度分布的测量,发展了J.G.Simmons的等温电流理论.在此基础上提出一种比较实验法,研究强电场作用下介质中产生新陷阱的动力学过程.结果表明在一定时间下,介质中新陷阱密度的产生与强电场的指数关系成正比,而在一定强电场下与作用时间成正比.Considering the difficulty in measuring electrons trap density and holes trap density, a surface potential model is suggested in this paper, with which the distributions of electrons trap energy density and holes trap energy density can be studied respectively. Such a method develops the theory of isothermal current put forward by J.G. Simmons. Based on that, a comparison experiment is performed to study the kinetic processes of trap creation in solid organic dielectrics under strong electrical strength. It is shown that trap generation is proportional to the time of field application, and increases exponentially with the field.

关 键 词：有机介质 陷阱 表面电位 等温电流 

分 类 号：TM215.1[一般工业技术—材料科学与工程]